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FT230XQ-R 数据表(PDF) 19 Page - List of Unclassifed Manufacturers

部件名 FT230XQ-R
功能描述  Future Technology Devices International Ltd.
PDF  44 Pages
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制造商  ETC2 [List of Unclassifed Manufacturers]
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标志 ETC2 - List of Unclassifed Manufacturers

FT230XQ-R 数据表(HTML) 19 Page - List of Unclassifed Manufacturers

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Copyright © 2013 Future Technology Devices International Limited
19
FT230X USB TO BASIC UART IC
Version 1.2
Document No.: FT_000566 Clearance No.: FTDI# 260
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
Voh
Output Voltage High
2.25
VCCIO
VCCIO
V
Ioh = +/-2mA
I/O Drive strength*
= 4mA
2.25
VCCIO
VCCIO
V
I/O Drive strength*
= 8mA
2.25
VCCIO
VCCIO
V
I/O Drive strength*
= 12mA
2.25
VCCIO
VCCIO
V
I/O Drive strength*
= 16mA
Vol
Output Voltage Low
0
0.4
V
Iol = +/-2mA
I/O Drive strength*
= 4mA
0
0.4
V
I/O Drive strength*
= 8mA
0
0.4
V
I/O Drive strength*
= 12mA
0
0.4
V
I/O Drive strength*
= 16mA
Vil
Input low Switching
Threshold
0.8
V
LVTTL
Vih
Input High Switching
Threshold
0.8
V
LVTTL
Vt
Switching Threshold
1.1
V
LVTTL
Vt-
Schmitt trigger negative
going threshold voltage
0.8
V
Vt+
Schmitt trigger positive
going threshold voltage
1.2
V
Rpu
Input pull-up resistance
40
75
190
KΩ
Vin = 0
Rpd
Input pull-down
resistance
40
75
190
KΩ
Vin =VCCIO
Iin
Input Leakage Current
-10
+/-1
10
μA
Vin = 0
Ioz
Tri-state output leakage
current
-10
+/-1
10
μA
Vin = 5.5V or 0
Table 5.5 I/O Pin Characteristics VCCIO = +2.5V (except USB PHY pins)
* The I/O drive strength and slow slew-rate are configurable in the MTP memory.



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