TIP140 datasheet(1/3 Pages) CDIL

部件名	TIP140

功能描述	SILICON PLANAR DARLINGTON POWER TRANSISTORS

PDF	3 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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SILICON PLANAR DARLINGTON POWER TRANSISTORS

TIP140, 141, 142 NPN

TIP145, 146, 147 PNP

TO- 3PN Non Isolated

Plastic Package

Designed for General Purpose Amplifier and Low Frequency Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

TIP145

TIP146

TIP147

Collector Base Voltage

VCBO

60

80

100

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEB0

V

Collector Current Continuous

IC

A

Collector Current Peak

*ICM

A

Base Current Continuous

IB

A

Total Power Dissipation at Tc = 25ºC

PD

W

Operating and Storage Junction

Temperature Range

Tj, Tstg

ºC

*5ms < 10% Duty Cycle

THERMAL RESISTANCE

From Junction to case

Rth (j-c)

ºC/W

From Junction to Ambient in free air

Rth (j-a)

ºC/W

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Sustaining Voltage

**VCEO (sus)

IC =30mA, IB=0

TIP140/145

60

V

TIP141/146

80

V

TIP142/147

100

V

Collector Cutoff Current

ICEO

VCE =1/2 rated VCEO, IB=0

2.0

mA

Collector Cutoff Current

ICBO

VCB =Rated VCBO, IE=0

1.0

mA

Emitter Cutoff Current

IEBO

VEB =5.0 V, IC=0

2.0

mA

DC Current Gain

**hFE

IC =5A, VCE =4V

1000

IC =10A, VCE =4 V

500

Collector Emitter Saturation Voltage

**VCE (sat)

IC =5A, IB=10mA

2.0

V

IC =10A, IB =40mA

3.0

V

Base Emitter Saturation Voltage

**VBE (sat)

IC =10A, IB =40mA

3.5

V

Base Emitter On Voltage

**VBE (on)

IC =10A, VCE =4 V

3.0

V

SWITCHING TIME

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Delay Time

td

0.15

µs

Rise Time

tr

0.55

µs

Storage Time

ts

2.5

µs

Fall Time

tf

2.5

µs

**Pulsed test : Pulse witdh = 300

µµs, duty cycle < 2%

TIP140_147 Rev190706E

TIP140

TIP141

TIP142

125

15

60

80

100

5.0

10

0.5

- 65 to +150

1.0

35.7

VCC=30V, IC=5A, IB=20mA,

Duty Cycle < 2%, IB1=IB2, RC &

RB varied Tj=25ºC

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

类似零件编号 - TIP140

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP140	204Kb / 4P	POWER TRANSISTORS(10A,60-100V,125W)
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ON Semiconductor	TIP140	217Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1
Power Innovations Ltd	TIP140	139Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP140	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000

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