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RC2012F2001CS 数据表(PDF) 2 Page - Samsung semiconductor |
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RC2012F2001CS 数据表(HTML) 2 Page - Samsung semiconductor |
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2 / 2 page ![]() Bending test Less than ±(0.5%+0.05Ω)of the initial value 50mΩ Max 3mm of bending shall be applied No evidence of mechanical damage for 5sec. Adhesive strength No mechanical damage or sign of disconnection Test strengh : 5N of termination Test time: Applying pressure for 10seconds Resistance to Less than ±(1%+0.05Ω)of the initial value 50mΩ Max 260±5℃ , 10 sec soldering heat No evidence of mechanical damage Anti-Vibration Less than ±(1%+0.05Ω)of the initial value 50mΩ Max Test amplitude : 1.5mm test No evidence of mechanical damage Frequency 10㎐-55㎐-10㎐ / 2hr in x,y,z direction. Temperature Less than ±(1%+0.1Ω)of the initial value 50mΩ Max 100cycles, -55℃/30min ↔125℃/30min cycle No evidence of mechanical damage sweep time:5min Load life Less than ±(3%+0.1Ω)of the initial value 50mΩ Max Test voltage: rated voltage / 70±2℃ No evidence of mechanical damage 1,000hours(90min:On , 30min:Off) Low Temp. Less than ±(3%+0.1Ω)of the initial value 50mΩ Max Dwell in -55℃ chamber without loading Exposure No evidence of mechanical damage for 1,000hours High Temp Less than ±(3%+0.1Ω)of the initial value 50mΩ Max Dwel in 125℃ or 155℃ chamber without loading Exposure No evidence of mechanical damage for 1,000hours Moisture Less than ±(3%+0.1Ω)of the initial value 50mΩ Max Test voltage: rated voltage / 40±2℃ Resistance No evidence of mechanical damage 1,000hours(90min:On,30min:Off) / 90~95% RH C. Recommended Soldering method : Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max ) * For the more detail Specification, Please refer to the samsung chip RESISTOR catalogue. Judgement Test condition |
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