NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS

MPS650 , MPS651 (NPN)

MPS750 , MPS751 (PNP)

TO -92

CBE

AMPLIFIER TRANSISTORS

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

MPS650

MPS651

UNITS

MPS750

MPS751

Collector -Emitter Voltage

VCEO

40

60

V

Collector -Base Voltage

VCBO

60

80

V

Emitter -Base Voltage

VEBO

V

Collector Current Continuous

IC

A

Power Dissipation @Ta=25 degC

PD

mW

Derate Above 25deg C

mW/deg C

Power Dissipation @Tc=25 degC

PD

W

Derate Above 25deg C

mW/deg C

Operating And Storage Junction

Tj, Tstg

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

deg C/W

Junction to Ambient

Rth(j-a)

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MPS650

MPS651

UNITS

MPS750

MPS751

Collector -Emitter Voltage

VCEO*

IC=10mA,IB=0

>40

>60

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

>60

>80

V

Emitter -Base Voltage

VEBO

IE=10uA, IC=0

>5.0

>5.0

V

Collector-Cut off Current

ICBO

VCB=60V, IE=0

<100

-

nA

VCB=80V, IE=0

-

<100

nA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

<100

<100

nA

DC Current Gain

hFE*

IC=50mA, VCE=2V

>75

>75

IC=500mA, VCE=2V

>75

>75

IC=1A, VCE=2V

>75

>75

IC=2A, VCE=2V

>40

>40

Collector Emitter Saturation Voltage

VCE(Sat)* IC=2A, IB=200mA

<0.50

<0.50

V

IC=1A, IB=100mA

<0.30

<0.30

V

Base Emitter on Voltage

VBE(on)*

IC=1A, VCE=2V

<1.0

<1.0

V

Base Emitter Saturation Voltage

VBE(Sat)* IC=1A, IB=100mA

<1.2

<1.2

V

Current Gain-Bandwidth Product

ft**

IC=50mA, VCE=5V

>75

>75

MHz

f=100MHz

*Pulse Condition : Length =300us, Duty Cycle=2%

**ft is defined as the frequency at which /hfe/ extrapolates to unity

200

1.5

12.0

-55 to +150

83.3

5.0

2.0

625

5.0

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company