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FP100 数据表(PDF) 2 Page - Filtronic Compound Semiconductors |
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FP100 数据表(HTML) 2 Page - Filtronic Compound Semiconductors |
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2 / 2 page ![]() PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT Phone: (408) 988-1845 http:// www.filss.com Email: sales@filss.com Fax: (408) 970-9950 Revised: 07/18/01 • RECOMMENDED CONTINUOUS OPERATING LIMITS Parameter Symbol Nominal Units Drain-Source Voltage VDS 5 V Gate-Source Voltage VGS -0.8 V Drain-Source Current IDS 0.5 IDSS mA RF Input Power PIN 30 mW Channel Operating Temperature TCH 150 °C Ambient Temperature TSTG -20/50 °C Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance. • ABSOLUTE RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 7 V Gate-Source Voltage VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 2.5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 60 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — -65 175 ºC Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. |
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