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CSD794 数据表(PDF) 2 Page - Continental Device India Limited |
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CSD794 数据表(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page ![]() Continental Device India Limited Data Sheet Page 2 of 3 Emitter-base voltage (open collector) VEBO max. 5.0 V Collector current (DC) IC max. 3.0 A Collector current (Pulse) (1) IC max. 5.0 A Base current (DC) IB max. 0.6 A Total power dissipation up to TC = 25°C Ptot max. 10 W Total power dissipation up to TA = 25°C Ptot max. 1.0 W Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified 794 794A Collector cutoff current IE = 0; VCB = 45V ICBO max. 1.0 µA Emitter cut-off current IC = 0; VEB = 3V IEBO max. 1.0 µA Breakdown voltages IC = 1 mA; IB = 0 VCEO min. 45 60 V IC = 1 mA; IE = 0 VCBO min. 70 70 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 1.5 A; IB = 0.15 A VCEsat* max. 2.0 V VBEsat* max. 2.0 V D.C. current gain IC = 20 mA; VCE = 5 V* hFE* min. 30 IC = 0.5 A; VCE = 5 V** hFE* min. 60 max. 320 Output capacitance at f = 1MHz IE = 0, VCB = 10V Co typ. 40 pF Transition frequency IC = 0.1 A; VCE = 5 V fT typ. 60 MHz * Pulse test: Pulse width ≤ 350 µs; duty cycle ≤ 2%. Pulsed. (1) PW ≤ 10 ms, Duty cycle ≤ 50%. ** hFE classification: R: 60-120 O: 100-200 Y: 160-320 CSD794, CSD794A |
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