NPN/PNP SILICON PLANAR TRANSISTORS

CL100S NPN

CK100S PNP

TO-39

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

50

V

Collector -Base Voltage

VCBO

60

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

ICM

1.0

A

Power Dissipation @ Ta=25 deg C

PD

800

mW

Derate Above 25 deg C

5.33

mW/deg C

Power Dissipation @ Tc=25 deg C

PD

3.0

W

Derate Above 25 deg C

20

mW/deg C

Operating & Storage Junction

Tj, Tstg

-55 to +175

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=1mA, IB=0

50

-

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

60

-

-

V

Emitter Base Voltage

VEBO

IE=100uA, IC=0

5.0

V

Collector Cut off Current

ICBO

VCB=40V, IE=0

-

-

1.0

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

1.0

uA

DC Current Gain

hFE*

2mA, VCE=5V

20

-

-

Collector -Emitter (sat) Voltage

VCE(sat)*

IC=150mA, IB=15mA

-

0.60

V

*Pulse Condition : Pulse Width =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

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