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L6387 数据表(PDF) 2 Page - STMicroelectronics |
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L6387 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) THERMAL DATA Symbol Parameter SO8 Minidip Unit Rth j-amb Thermal Resistance Junction to Ambient 150 100 °C/W PIN DESCRIPTION N. Name Type Function 1 LIN I Lower Driver Logic Input 2 HIN I Upper Driver Logic Input 3 Vcc I Low Voltage Power Supply 4 GND Ground 5 LVG (*) O Low Side Driver Output 6 VOUT O Upper Driver Floating Reference 7 HVG (*) O High Side Driver Output 8 Vboot Bootstrap Supply Voltage (*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder" resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low. Vcc HIN LIN GND 1 3 2 4LVG OUT HVG Vboot 8 7 6 5 D97IN517 PIN CONNECTION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vout Output Voltage -3 to Vboot - 18 V Vcc Supply Voltage - 0.3 to +18 V Vboot Floating Supply Voltage - 1 to 618 V Vhvg Upper Gate Output Voltage - 1 to Vboot V Vlvg Lower Gate Output Voltage -0.3 to Vcc +0.3 V Vi Logic Input Voltage -0.3 to Vcc +0.3 V dVout/dt Allowed Output Slew Rate 50 V/ns Ptot Total Power Dissipation (Tj = 85 °C) 750 mW Tj Junction Temperature 150 °C Ts Storage Temperature -50 to 150 °C Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900V (Human Body Model) L6387 2/9 |
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