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BC309C 数据表(PDF) 2 Page - Continental Device India Limited

部件名 BC309C
功能描述  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  5 Pages
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制造商  CDIL [Continental Device India Limited]
网页  http://www.cdilsemi.com
标志 CDIL - Continental Device India Limited

BC309C 数据表(HTML) 2 Page - Continental Device India Limited

  BC309C Datasheet HTML 1Page - Continental Device India Limited BC309C Datasheet HTML 2Page - Continental Device India Limited BC309C Datasheet HTML 3Page - Continental Device India Limited BC309C Datasheet HTML 4Page - Continental Device India Limited BC309C Datasheet HTML 5Page - Continental Device India Limited  
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SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C
BC 308, A, B, C
BC 309, A, B, C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Emitter Breakdown
BVCEO
IC=2mA,IB=0
Voltage
BC307
45
V
BC308, BC309
25
V
Emitter Base Breakdown Voltage
BVEBO
IE=100uA, IC=0
5V
Collector Emitter Leakage Current
BC307
ICES
VCES =50V, VBE =0
15
nA
BC308, BC309
VCES =30V, VBE =0
15
nA
BC307
VCES =50V, VBE =0,
4
µA
TA =125
oC
BC308, BC309
VCES =30V, VBE =0,
4
µA
TA =125
oC
DC Current Gain
A
hFE
IC=10uA,VCE=5V
90
B
150
C
270
BC307, BC308, BC309
IC=2mA,VCE=5V
120
800
A
120
170
220
B
200
290
460
C
420
500
800
A
IC=2mA,VCE=5V*
120
B
180
C
300
Collector Emitter Saturation
VCE(sat) IC=10mA,IB=0.5mA
0.10
0.3
V
Voltage
IC=100mA,IB=5mA
0.25
V
Base Emitter Saturation Voltage
VBE(sat) IC=10mA,IB=0.5mA
0.7
V
IC=100mA,IB=5mA
1.0
V
Base Emitter On Voltage
VBE(on) IC=2mA,VCE=5V
0.55
0.62
0.7
V
Continental Device India Limited
Data Sheet
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