BAS116 datasheet(1/3 Pages) CDIL

部件名	BAS116

功能描述	SILICON PLANAR SWITCHING DIODE

PDF	3 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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SILICON PLANAR SWITCHING DIODE

BAS116

SOT-23

Formed SMD Package

Marking

BAS116 =JV

Low Leakage Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Continuous Reverse Voltage

VR

V

Repetitive Peak Reverse Voltage

VRRM

V

Forward Current (DC)

IF

mA

Non Repetitive Peak Surge Forward

Current

t=1

µµs

IFSM

A

t=1s

IFSM

A

Power Dissipation at Ta=54ºC

PD

mW

Junction Temperature

Tj

oC

Storage Temperature Range

Tstg

oC

Thermal Resistance

Junction to Soldering Point

*Rth (j-s)

K/W

*For calculation of Rth (j-a) please refer to application note thermal resistance

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Breakdown Voltage

V(BR)

I(BR)=100µA

85

V

Reverse Voltage Leakage Current

IR

VR=75V

5.0

nA

VR=75V, Ta=150ºC

80

nA

Forward Voltage

VF

IF=1mA

0.9

V

IF=10mA

1.0

V

IF=50mA

1.1

V

IF=150mA

1.25

V

Diode Capacitance

Cd

VR=0V, f=1MHz

2.0

pF

Reverse Recovery Time When Switched

from

trr

IF=10mA to

IR=10mA, RL100 Ω,

measured at IR=1mA

1.5

µs

VALUE

80

85

- 65 to +150

0.5

250

4.5

150

< 260

Pin Configuration

1 =

2 = NC

3 =

ANODE

CATHODE

3

1

2

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

BAS116 Rev140505E

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