ACT512

Rev 4, 13-Feb-14

- 4 -

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Copyright © 2014 Active-Semi, Inc.

Active-Semi Proprietary―For Authorized Recipients and Customers

ActiveQR

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current Limit

CS Current Limit Threshold

0.91

0.96

1.01

V

Leading Edge Blanking Time

240

300

360

ns

GATE DRIVE

Gate Rise Time

VDD = 10V, CL = 1nF

150

250

ns

Gate Falling Time

VDD = 10V, CL = 1nF

115

200

ns

Gate Low Level ON-Resistance

7

Ω

Gate High Level ON-Resistance

40

Ω

Gate Leakage Current

GATE = 25V, before VDD

turn-on

1

µA

Oscillator

Maximum Switching Frequency

75

kHz

Switching Frequency Foldback

kHz

Maximum Duty Cycle

65

75

%

Valley Detection

ZCD Threshold Voltage

100

mV

Valley Detection Time Window

After valley detection time

window, if no valley de-

tected, forcedly turn-on

main switch

3.5

µs

VDET Leakage Current

1

µA

Protection

CS Short Waiting Time

2

µs

CS Short Detection Threshold

0.115

V

CS Open Threshold Voltage

1.73

V

Abnormal OCP Blanking Time

150

ns

Thermal Shutdown Temperature

135

˚C

Line UVLO

0.1

mA

Line OVP

2

mA

VDET Over Voltage Protection

2.448

2.72

2.992

V

VDET Vo Short Threshold

0.406

0.58

0.754

V

ELECTRICAL CHARACTERISTICS CONT’D