J/SST/U308 Series

Vishay Siliconix

Document Number: 70237

S-50149—Rev. H, 24-Jan-05

www.vishay.com

3

Limits

U309

U310

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Unit

Static

Gate-Source Breakdown Voltage

−35

−25

−25

V

Gate-Source Cutoff Voltage

−1

−4

−2.5

−6

V

12

30

24

60

mA

Gate Reverse Current

−0.002

nA

Gate Reverse Current

−0.001

mA

Gate Operating Current

−15

pA

Drain-Source On-Resistance

35

W

Gate-Source Forward Voltage

0.7

1

1

V

Dynamic

Common-Source

Forward Transconductance

14

10

10

mS

Common-Source

Output Conductance

f = 1 kHz

110

250

250

mS

Common-Source

Input Capacitance

4

5

5

pF

Common-Source

Reverse Transfer Capacitance

f = 1 MHz

1.9

2.5

2.5

pF

Equivalent Input Noise Voltage

f = 100 Hz

6

nV⁄

√Hz

High Frequency

Common-Gate

f = 105 MHz

14

Common-Gate

Forward Transconductance

f = 450 MHz

13

mS

Common-Gate

g

f = 105 MHz

0.16

mS

Common-Gate

Output Conductance

f = 450 MHz

0.55

G

f = 105 MHz

16

14

14

f = 450 MHz

11.5

10

10

dB

NF

f = 105 MHz

1.5

2

2

dB

NF

f = 450 MHz

2.7

3.5

3.5

Notes

a.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NZB

b.

Pulse test: PW v300 ms duty cycle v3%.

c.

d.

Not a production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.