STB76NF80 datasheet(3/13 Pages) STMICROELECTRONICS

部件名	STB76NF80

功能描述	N-channel 80 V, 0.0095 廓, 80 A D2PAK STripFET??II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 13 page

STB76NF80

Electrical ratings

Doc ID 17290 Rev 1

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 20

(1)

Current limited by package

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC=100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

300

Derating factor

2.0

W/°C

dv/dt (3)

ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V

Single pulse avalanche energy

700

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.5

°C/W

RthJA

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose (1)

1.6mm from case for 10 sec

300

°C

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