STP200N6F3 datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STB200N6F3, STI200N6F3, STP200N6F3

4/16

Doc ID 15606 Rev 2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS= max rating,

VDS= max rating,@125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 60 A

D²PAK

TO-220, I²PAK

3.3

3.5

3.8

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1MHz,

VGS = 0

6265

1295

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 15,

Figure 20)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 30 V, ID = 120 A,

VGS = 10 V,

(see

Figure 16)

101

25.2

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