Characteristics

STPS41H100C

2/9

Doc ID 8613 Rev 5

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode1) x R

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

30

A

Average forward current

δ = 0.5

Per diode

Per device

20

A

40

Surge non repetitive forward current

220

A

Repetitive peak reverse current

1

A

Repetitive peak avalanche power

18100

W

Storage temperature range

-65 to + 175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

1.5

°C/W

Total

0.8

Coupling

0.1

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage

current

10

μA

3

10

mA

VF

(1)

Forward voltage drop

0.80

V

0.62

0.67

0.90

0.70

0.76

dPtot

dTj

<

1

Rth(j-a)