STP16N65M5 datasheet(3/20 Pages) STMICROELECTRONICS

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STF/I/P/U/W16N65M5

Electrical ratings

Doc ID 15210 Rev 4

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-220, I²PAK,

IPAK, TO-247

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

12 (1)

Limited by maximum junction temperature

Drain current (continuous) at TC = 100 °C

7.3 (1)

7.3

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

48 (1)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

200

dv/dt (3)

ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP I²PAK TO-220

IPAK

TO-247

Rthj-case

Thermal resistance junction-case

max

51.38

°C/W

Rthj-amb

Thermal resistance junction-

ambient max

62.5

100

°C/W

Maximum lead temperature for

soldering purpose

300

°C

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