155 MHz LASER SWITCH

Rev F1, Page 5/8

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3.5...5.5 V, Tj = -25...125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Tj

Fig.

Unit

No.

°C

Min.

Typ.

Max.

Total Device

001

VDD

Permissible Supply Voltage

3.5

5.5

V

002

I(VDD)

Supply Current in VDD

CW operation

0

80

µA

003

I(VDD)

Supply Current in VDD

pulsed operation,

f(EN1, EN2) = 150 MHz

0

150

mA

004

V(LDK)

Permissible Voltage at LDK

iC-HK

0

5.5

V

iC-HKB

0

12

V

005

Vc(CI)hi

Clamp Voltage hi at CI

Vc(CI) = V(CI) – VDD,

I(CI) = 10 mA, other pins open

0.4

1.25

V

006

Vc(EN)hi

Clamp Voltage hi at EN1, EN2

Vc(EN) = V(EN) – VDD,

I(EN) = 1 mA, other pins open

0.4

1.25

V

007

Vc()lo

Clamp Voltage lo at VDD, LDK,

CI, EN1, EN2, AGND1, AGND2

I() = -10 mA, other pins open

-1.25

-0.4

V

008

Ipd()

Pull-Down Current at CI, EN1,

EN2

1

5

µA

009

Toff

Overtemperature Shutdown

110

150

°C

Laser Control LDK, CI, EN1, EN2

101

Icw(LDK)

Permissible CW Current in LDK

(per channel)

150

mA

102

Ipk(LDK)

Permissible Pulsed Current in

LDK (per channel)

f > 100 kHz, thi/T < 1:10

700

mA

107

Vs(LDK)

Saturation Voltage at LDK

I(LDK) = 40 mA

1.2

V

I(LDK) = 60 mA

1.3

V

I(LDK) = 150 mA, iC-HK

1.5

V

I(LDK) = 150 mA, iC-HKB

1.8

V

108

I0(LDK)

Leakage Current in LDK

ENx = lo, V(LDK) = VDD

0

10

µA

109

tr()

LDK Current Rise Time

Iop = 150 mA,

I(LDK): 10% → 90%Iop

3

1.5

ns

110

tf()

LDK Current Fall Time

Iop(LDK) = 150 mA,

I(LDK): 90% → 10%Iop

3

1.5

ns

111

tp()

Propagation Delay

V(ENx) → I(LDK)

ENx hi ↔ lo, V(50%) → I(50%)

1

3

ns

112

Vt(ENx)

Input Threshold Voltage

33

50

67

%VDD

113

V(CI)

Permissible Voltage at CI

0

5.5

V

114

Vt(CI)

Threshold Voltage at CI

I(LDK) < 5 mA

0.75

1.15

V

115

CR()

Current Matching Chan-

nel1/Channel2

V(CI) = 0...VDD,

I(LDK) = 30...300 mA, RK1 = RK2

0.9

1

1.1