ZXGD3102 datasheet(3/15 Pages) DIODES

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Issue 4, May 2009

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©Diodes Incorporated 2008

ZXGD3102T8

DC Electrical characteristics at T

A = 25°C;

VCC = 10V; RBIAS = 3.3kΩ; RREF=3.9kΩ

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Input and supply characteristics

Operating current

IOP

VD ≤ -100m V

2.4

VD ≥ 0V

5.2

Gate Driver

Turn-off Threshold Voltage(**)

VG = 1V, (*)

-50

-24

GATE output voltage (**)

VG(off)

VD ≥ 0V, (*)

0.58

VD = -60mV, ( )

4.1

VD = -80mV, ( )

6.5

8.5

VD = -100mV, ( )

8.0

VD = -140mV, ( )

8.5

9.4

GATEH peak source current

ISOURCE

VGH = 1V

GATEL peak sink current

ISINK

VGL = 5V

DC Electrical Characteristics at TA = 25°C;

VCC = 10V; RBIAS = 3.9kΩ; RREF=3.9kΩ

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Input and supply characteristics

Operating current

IOP

VD ≤ -100m V ( )

2.4

VD ≥ 0V (*)

4.8

Gate Driver

Turn-off Threshold Voltage(**)

VG = 1V, (*)

-55

-29

GATE output voltage (**)

VG(off)

VD ≥ 0V, (*)

0.57

VD = -60mV, ( )

3.5

6.5

VD = -80mV, ( )

6.5

8.5

VD = -100mV, ( )

8.0

8.8

VD = -140mV, ( )

8.5

9.4

GATEH peak source current

ISOURCE

VGH = 1V

GATEL peak sink current

ISINK

VGL = 5V

Notes:

(**)

GATEH connected to GATEL

(*)

RH = 100kΩ, RL = O/C; RH needed only for characterization purposes, not in the application

( )

RL = 100kΩ, RH = O/C; RL needed only for characterization purposes, not in the application

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