STPSC8H065 datasheet(2/14 Pages) STMICROELECTRONICS

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Characteristics

STPSC8H065

2/14

DocID023603 Rev 4

Characteristics

To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.144 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS) Forward rms current

IF(AV)

Average forward

current

TO-220AC, DPAK, D2PAK, Tc = 140 °C

(1), DC

TO-220AC Ins, Tc = 95 °C

(1), DC

IFSM

Surge non

repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

420

IFRM

Repetitive peak

forward current

TO-220AC, DPAK, D2PAK, Tc = 140 °C

(1), T

j = 175 °C, δ = 0.1

TO-220AC Ins, Tc = 95 °C

(1), T

j = 175 °C, δ = 0.1

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature(2)

-40 to +175

°C

Value based on Rth(j-c) max.

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

Rth j

–

()

--------------------------

Table 3. Thermal resistance

Symbol

Parameter

Typ. value

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AC, DPAK, D2PAK

1.3

1.6

°C/W

TO-220AC Ins

2.45

3.8

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-7

µA

Tj = 150 °C

335

(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

-1.56

1.75

Tj = 150 °C

1.98

2.5

tp = 10 ms, δ < 2%

tp = 500 µs, δ < 2%

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