LM4953_14 datasheet(3/19 Pages) TI1

3 / 19 page

LM4953, LM4953SDBD

www.ti.com

SNAS299E – SEPTEMBER 2005 – REVISED FEBRUARY 2006

PIN DESCRIPTIONS

Name

Function

Active Low Shutdown

CPVDD

Charge Pump Power Supply

CCP+

Positive Terminal - Charge Pump Flying

Capacitor

PGND

Power Ground

CCP-

Negative Terminal - Charge Pump Flying

Capacitor

VCP_OUT

Charge Pump Output

No Connect

AVSS

Negative Power Supply - Amplifier

OUT B

Output B

AVDD

Positive Power Supply - Amplifier

OUT A

Output A

No Connect

VIN

Signal Input

SGND

Signal Ground

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

Supply Voltage (VDD)

4.5V

Storage Temperature

−65°C to +150°C

Input Voltage

-0.3V to VDD + 0.3V

Power Dissipation(4)

Internally Limited

ESD Susceptibility(5)(6)

2000V

ESD Susceptibility(7)(6)

200V

Junction Temperature

150°C

Thermal Resistance

See AN-1187(SNOA401) 'Leadless Leadframe Packaging (LLP).'

(1)

All voltages are measured with respect to the GND pin unless otherwise specified.

(2)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions that ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given; however, the typical value is a good indication

of device performance.

(3)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(4)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,

TA. The maximum allowable power dissipation is PDMAX = (TJMAX – TA)/θJA or the number given in Absolute Maximum Ratings,

whichever is lower. For the LM4xxx typical application (shown in Figure 1) with VDD = yyV, RL = 2μF+30Ω mono BTL operation the total

power dissipation is xxxW.

θJA = 40°C/W.

(5)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(6)

If the product is in shutdown mode and VDD exceeds 3.6V (to a max of 4V VDD), then most of the excess current will flow through the

ESD protection circuits. If the source impedance limits the current to a max of 10mA, then the part will be protected. If the part is

enabled when VDD is above 4V, circuit performance will be curtailed or the part may be permanently damaged.

(7)

Machine Model, 220pF-240pF discharged through all pins.

Operating Ratings

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ TA ≤ 85°C

Supply Voltage (VDD)

1.6V

≤ VDD ≤ 4.2V

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