PRELIMINARY

SOLID STATE DEVICES, INC.

SFF1310M

SFF1310Z

FEATURES:

DATA SHEET #: FT0004A

MAXIMUM RATINGS

• Rugged construction with polysilicon gate

• Low RDS (on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

• Fast recovery and superior dv/dt performance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed package

• TX, TXV, and Space Level screening available

• Replaces: SMM40N20 Type

TO-3

40 AMPS

200 VOLTS

0.050

S

N-CHANNEL

POWER MOSFET

DESIGNER'S DATA SHEET

14830 Valley View Av. * La Mirada, Ca 90670

Phone: (562) 404-7855 * Fax: (562) 404-1773

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

PACKAGE OUTLINE: TO-3

PINOUT:

DRAIN:

PIN 1

SOURCE:

PIN 2

GATE:

PIN 3

±

20

Volts

Gate to Source Voltage

40

Continuous Drain Current

Drain to Source Voltage

200

Amps

Volts

Thermal Resistance, Junction to Case

-55 to +150

Operating and Storage Temperature

0.5

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Watts

Total Device Dissipation

250

190