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MB3790 数据表(PDF) 10 Page - fujitsu semiconductor

部件名 MB3790
功能描述  Battery Backup IC
PDF  21 Pages
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制造商  FUJITSU [fujitsu semiconductor]
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标志 FUJITSU - fujitsu semiconductor

MB3790 数据表(HTML) 10 Page - fujitsu semiconductor

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10
MB3790
(Continued)
(VIN = +5 V, Ta = +25
°C)
Parameter
Symbol
Conditions
Value
Unit
Min.
Typ.
Max.
Battery-1
Monitoring
Section
Low voltage detection 1
VBATL1
VBAT
2.55
2.65
2.75
V
Ta = – 30°C to +70°C
2.52
2.65
2.78
V
VBATH1
VBAT
2.59
2.69
2.79
V
Ta = – 30°C to +70°C
2.56
2.69
2.82
V
Low voltage detection-1
hysteresis width
DVBAT1
VBATH1 – VBATL1
20
40
60
mV
Low voltage detection 2
VBATL2
VBAT
2.27
2.37
2.47
V
Ta = – 30°C to +70°C
2.24
2.37
2.50
V
VBATH2
VBAT
2.31
2.41
2.51
V
Ta = – 30°C to +70°C
2.28
2.41
2.54
V
Low voltage detection-2
hysteresis width
DVBAT2
VBATH2 – VBATL2
20
40
60
mV
Low voltage detection
difference
DVBAT
VBATL1 – VBATL2
0.26
0.28
0.30
V
Battery-1 input current
IBATA
VBAT = 3 V, VIN = 0 V
–100
—
500
nA
IBATB
VBAT = 3 V, VIN = 5 V
–100
—
500
nA
Battery-1 output voltage
difference
during backup, CTL = GND
DVB1
IBAT1 = 100
µA
—
0.30
0.35
V
IBAT1 = 10
µA
—
0.10
0.15
V
Alarm output voltage
VOHA
IOHA = 4 mA
4.5
4.8
—
V
VOLA
IOLA = 5 mA
—
0.2
0.4
V
Alarm output rise time
trA
CL = 100 pF
—2.0
3.0
µs
Alarm output fall time
tfA
—0.2
1.0
µs
Alarm output delay time
tpdA
50 mV overdrive
—
2.0
10
µs
Battery-2
Monitoring
Section
Battery-2 recharging
voltage
VCHG
ICHG = –10
µA
2.80
3.00
3.20
V
Battery-2 recharging current ICHG
VCHG = 2.0 V
1.0
2.0
—
mA
Battery-2 output voltage
difference
during backup
DVB2
IBAT2 = 10
µA
—
0.10
0.15
V



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