PM0010 datasheet(2/2 Pages) SSDI

2 / 2 page

SOLID STATE DEVICES, INC.

PRELIMINARY

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)

Collector - Emitter Breakdown Voltage

(ICES = 250:A, VGE = 0V)

RATING

SYMBOL

MIN

MAX

UNIT

PACKAGE OUTLINE: ASPM

Gate - Emitter Threshold Voltage

(IC = 5mA, VCE = VGE)

VCE(sat)2

VCE(sat)1

(TB = 25oC)

(TB = 90oC)

3.1

2.5

SPMQ496-01

Gate-Emitter Leakage Current

(VGE = "20V, VCE = 0V)

ICES1

2.0

IGES

225

BVCES

Volts

600

Tolerances

(Unless specified):

.XX

.XXX

".03

".010

Collector-Emitter Saturation Voltage

(IC = 200A, VGE = 15V)

VGE(th)

(TB = 25oC)

(TB = 125oC)

Collector Leakage Current

(VCE = 480V, VGE = 0V)

Anti-Parallel Diode Forward Voltage

(IF = 200A, TB = 25oC)

Insulation Resistance (All terminals to Base @1500V)

RINSUL1

2.0

Volts

:Amps

mAmps

Volts

:Amps

1.6

Volts

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