数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STGP35N35LZ 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGP35N35LZ
功能描述  Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
PDF  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP35N35LZ 数据表(HTML) 4 Page - STMicroelectronics

  STGP35N35LZ Datasheet HTML 1Page - STMicroelectronics STGP35N35LZ Datasheet HTML 2Page - STMicroelectronics STGP35N35LZ Datasheet HTML 3Page - STMicroelectronics STGP35N35LZ Datasheet HTML 4Page - STMicroelectronics STGP35N35LZ Datasheet HTML 5Page - STMicroelectronics STGP35N35LZ Datasheet HTML 6Page - STMicroelectronics STGP35N35LZ Datasheet HTML 7Page - STMicroelectronics STGP35N35LZ Datasheet HTML 8Page - STMicroelectronics STGP35N35LZ Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 18 page
background image
Electrical characteristics
STGB35N35LZ, STGP35N35LZ
4/18
DocID12253 Rev 6
2
Electrical characteristics
(T
j
=25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
CES(clamped)
Collector emitter
clamped voltage
(V
GE
=0)
I
C
=2 mA,
345
V
I
C
=2 mA,
T
j
= - 40 °C to 150 °C
320
380
V
V
(BR)ECS
Emitter collector break-
down voltage (V
GE
=0)
I
C
= 75 mA
20
28
V
V
GE(clamped)
Gate emitter clamped
voltage
I
G
= ± 2 mA
12
14
16
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 15 V, T
j
=150 °C
10
μA
V
CE
=200 V, T
j
=150 °C
100
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±10 V
500
625
830
μA
R
GE
Gate emitter resistance
12
15
20
k
Ω
R
G
Gate resistance
1.5
k
Ω
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA,
T
j
=-40 °C
1.4
V
V
CE
=V
GE
, I
C
= 1 mA
1.2
1.6
2.3
V
V
CE
=V
GE
, I
C
= 1 mA,
T
j
=150 °C
0.7
V
V
CE(sat)
Collector-emitter
saturation voltage
V
GE
=4.5 V, I
C
= 10 A
1.15
1.5
V
V
GE
=4.5 V, I
C
= 15 A
1.3
1.7
V
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25V, f = 1MHz,
V
GE
= 0
-700
-
pF
C
oes
Output capacitance
-
150
-
pF
C
res
Reverse transfer
capacitance
-6
-
pF
Q
g
Gate charge
V
CE
= 280V, I
C
= 15A,
V
GE
= 5V
-49
-
nC



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com