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STL70N10F3 数据表(PDF) 3 Page - STMicroelectronics |
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STL70N10F3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() STL70N10F3 Electrical ratings Doc ID 018794 Rev 3 3/17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according to Rthj-c. Drain current (continuous) at TC = 25 °C 82 A ID (1) Drain current (continuous) at TC = 100 °C 58 A ID (2) 2. The value is rated according to Rthj-pcb. Drain current (continuous) at Tpcb = 25 °C 16 A IDM (3),(2) 3. Pulse width limited by safe operating area. Drain current (pulsed) 64 A PTOT (1) Total dissipation at TC = 25 °C 136 W PTOT (2) Total dissipation at Tpcb = 25 °C 4 W TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.1 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 31 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current, (pulse width limited by Tj max) 16 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 50 V) 770 mJ |
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