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MB84VB2000 数据表(PDF) 13 Page - fujitsu semiconductor

部件名 MB84VB2000
功能描述  8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
PDF  28 Pages
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制造商  FUJITSU [fujitsu semiconductor]
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标志 FUJITSU - fujitsu semiconductor

MB84VB2000 数据表(HTML) 13 Page - fujitsu semiconductor

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MB84VB2000-10/MB84VB2001-10
s AC CHARACTERISTICS
•CE Timing
• Read Only Operations Characteristics
Note: Test Conditions–Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Parameter
Symbols
Description
Test Setup
-10
Unit
JEDEC
Standard
—tCCR
CE Recover Time
—
Min.
0
ns
Parameter
Symbols
Description
Test
Setup
-10
(Note)
Unit
JEDEC
Standard
Min.
Max.
tAVAV
tRC
Read Cycle Time
—
100
—
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
—100
ns
tELQV
tCE
Chip Enable to Output Delay
OE = VIL
—100
ns
tGLQV
tOE
Output Enable to Output Delay
—
—
40
ns
tEHQZ
tDF
Chip Enable to Output High-Z
—
—
30
ns
tGHQZ
tDF
Output Enable to Output High-Z
—
—
30
ns
tAXQX
tOH
Output Hold Time from Addresses,
CE or OE, Whichever Occurs First
—0
—
ns
—tREADY
RESET Pin Low to Read Mode
—
—
20
µs
—
tELFL
tELFH
CE or BYTE Switching Low or High
—
—
5
ns



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