2N683 datasheet(3/6 Pages) MICROSEMI

3 / 6 page

T4-LDS-0249, Rev. 1 (120183)

Page 3 of 6

2N682, 2N683, 2N685 – 2N692

and 2N5206

ELECTRICAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Repetitive Peak Reverse Voltage

And

Repetitive peak off-state voltage

2N682

2N683

2N685

2N686

2N687

2N688

2N689

2N690

2N691

2N692

2N5206

VRRM

(1)

and

VDRM

100

200

250

300

400

500

600

700

800

1,000

V (pk)

(1)

Values applicable to zero or negative gate voltage (VGM).

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Holding current:

Bias condition D; VAA = 24 V maximum;

ITM = IF1 = 1 A

IT = IF2 = 100 mA

trigger voltage source = 10 V

trigger PW = 100 μs (minimum)

= 20 Ω

Reverse blocking current

AC method, bias condition D;

f = 60 Hz, VRRM = rated

IRRM1

mA (pk)

Forward blocking current

AC method, bias condition D;

f = 60 Hz; VDRM = rated

IDRM1

mA (pk)

Gate trigger voltage and current

V2 = VD = 6 V; RL

= 50 Ω;

= 20 Ω maximum

VGT1

IGT1

Forward on voltage

ITM = 50 A(pk) (pulse);

pulse width = 8.5 ms; maximum;

duty cycle = 2 percent maximum

VTM

V (pk)

Reverse gate current

VG = 5 V

250

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