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BAS16 数据表(PDF) 2 Page - General Semiconductor |
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BAS16 数据表(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAS16 Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF – – – – – – – – 715 855 1000 1250 mV mV mV mV Leakage Current at VR = 25 V, Tj = 150 °C at VR = 75 V at VR = 75 V, Tj = 150 °C IR IR IR – – – – – – 30 1 50 µA µA µA Capacitance at VR = 0; f = 1 MHz Ctot ––2pF Reverse Recovery Time from IF = 10 mA to IR = 10 mA IR = 1 mA, RL = 100 Ω trr ––6ns Thermal Resistance BAS16 Junction to Ambient Air RthJA – – 4301) K/W K/W 1) Device on fiberglass substrate, see layout (SOT-23). Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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