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BAS16WS 数据表(PDF) 2 Page - General Semiconductor

部件名 BAS16WS
功能描述  SMALL SIGNAL DIODES
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAS16WS 数据表(HTML) 2 Page - General Semiconductor

  BAS16WS Datasheet HTML 1Page - General Semiconductor BAS16WS Datasheet HTML 2Page - General Semiconductor  
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BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
VF
715
mV
at IF = 10 mA
VF
855
mV
at IF = 50 mA
VF
1.00
V
at IF = 150 mA
VF
1.25
V
Leakage Current
at VR = 25 V, Tj = 150 °C
IR
––30
µA
at VR = 75 V
IR
––
1
µA
at VR = 75 V, Tj = 150 °C
IR
––50
µA
Capacitance
Ctot
––
2
pF
at VR = 0; f = 1 MHz
Reverse Recovery Time
trr
––
6
ns
from IF = 10 mA to IR = 10 mA
IR = 1 mA, RL = 100
Thermal Resistance
BAS16D
RthJA
3751)
°C/W
Junction to Ambient Air
BAS16WS
6501)
°C/W
1)Valid provided that electrodes are kept at ambient temperature



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