BAS40 datasheet(1/2 Pages) GE

部件名	BAS40

功能描述	Schottky Diodes

PDF	2 Pages

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制造商	GE [General Semiconductor]

网页	http://www.vishay.com

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FEATURES

Schottky Diodes

Dimensions in inches and (millimeters)

.016 (0.4)

.037(0.95) .037(0.95)

.122 (3.1)

.016 (0.4)

3

12

Top View

.102 (2.6)

.118 (3.0)

.094 (2.4)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE

Ratings at 25 °C ambient temperature unless otherwise specified

SOT-23

4/98

BAS40 THRU BAS40-06

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

VRRM

40

V

Forward Continuous Current at Tamb = 25 °C

IF

2001)

mA

Surge Forward Current at tp <1 s, Tamb = 25 °C

IFSM

6001)

mA

Power Dissipation1) at Tamb = 25 °C

Ptot

2001)

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

TS

–55 to +150

°C

1) Device on fiberglass substrate, see layout

These diodes feature very low turn-on

voltage and fast switching.

These devices are protected by a PN

junction guard ring against excessive

voltage, such as electrostatic discharges.

♦

BAS40

1

3

2

Top View

1

3

2

BAS40-04

Marking: 43

Marking: 44

1

3

2

Top View

1

3

2

BAS40-05

BAS40-06

Marking: 45

Marking: 46

类似零件编号 - BAS40

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS40	58Kb / 8P	Schottky barrier double diodes 1999 Apr 28
Siemens Semiconductor G...	BAS40	108Kb / 5P	Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
Siemens Semiconductor G...	BAS40	96Kb / 4P	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)
Diodes Incorporated	BAS40	155Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE DS11006 Rev. 12 - 2
Microsemi Corporation	BAS40	122Kb / 2P	SCHOTTKY array??SERIES

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类似说明 - BAS40

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AiT Semiconductor Inc.	B0520W	531Kb / 5P	SCHOTTKY DIODES SCHOTTKY BARRIER DIODES REV1.0
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