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BAS21 数据表(PDF) 1 Page - General Semiconductor

部件名 BAS21
功能描述  Small Signal Diodes
PDF  3 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAS21 数据表(HTML) 1 Page - General Semiconductor

  BAS21 Datasheet HTML 1Page - General Semiconductor BAS21 Datasheet HTML 2Page - General Semiconductor BAS21 Datasheet HTML 3Page - General Semiconductor  
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FEATURES
Small Signal Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.037(0.95) .037(0.95)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
12
Top View
.102 (2.6)
.118 (3.0)
.094 (2.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
SOT-23
4/98
Symbol
Value
Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
VR
VR
100
150
200
V
V
V
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
VRRM
VRRM
120
200
250
V
V
V
Non-Repetitive Peak Forward Current
at t = 1
µs
at t = 1 s
IFSM
IFSM
2.5
0.5
A
A
Average Rectified Forward Current
(averaged over any 20 ms period)
IF(AV)
2001)
mA
Forward DC Current at Tamb = 25 °C
IF
2002)
mA
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation up to Tamb = 25 °C
Ptot
2002)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
– 65 to +150
°C
1) Measured under pulse conditions; Pulse time = tp
≤ 0.3 ms.
2) Device on fiberglass substrate, see layout.
1
3
2
Top View
BAS19, BAS20, BAS21
Silicon Planar Epitaxial High-Speed
Diodes
For switching and general purpose
applications.
These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82


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