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BAT54C 数据表(PDF) 2 Page - General Semiconductor |
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BAT54C 数据表(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified BAT54 THRU BAT54S Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage tested with 100 µA Pulses V(BR)R 30 ––V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA VF VF VF VF VF – – – – – – – – – – 240 320 400 500 1000 mV mV mV mV mV Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V IR ––2 µA Capacitance at VF = 1 V, f = 1 MHz Ctot ––10 pF Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω trr ––5ns Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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