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BAV101 数据表(PDF) 2 Page - General Semiconductor |
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BAV101 数据表(HTML) 2 Page - General Semiconductor |
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2 / 4 page  ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAV100 THRU BAV103 Symbol Min. Typ. Max. Unit Forward voltage at IF = 100 mA VF ––1 V Leakage Current at VR = 50 V BAV100 at VR = 50 V, Tj = 100 °C BAV100 at VR = 100 V BAV101 at VR = 100 V, Tj = 100 °C BAV101 at VR = 150 V BAV102 at VR = 150 V, Tj = 100 °C BAV102 at VR = 200 V BAV103 at VR = 200 V, Tj = 100 °C BAV103 IR IR IR IR IR IR IR IR – – – – – – – – – – – – – – – – 100 15 100 15 100 15 100 15 nA µA nA µA nA µA nA µA Dynamic Forward Resistance at IF = 10 mA rf –5– Ω Capacitance at VR = 0, f = 1 MHz Ctot –1.5 –pF Reverse Recovery Time from IF = 30 mA through IR = 30 mA to IR = 3 mA; RL = 100 Ω trr ––50 ns Thermal Resistance Junction to Ambient Air RthJA ––0.3751) K/mW 1) Valid provided that electrodes are kept at ambient temperature. |
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