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BAV19WS 数据表(PDF) 1 Page - General Semiconductor

部件名 BAV19WS
功能描述  SMALL SIGNAL DIODES
PDF  4 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAV19WS 数据表(HTML) 1 Page - General Semiconductor

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BAV19WS THRU BAV21WS
SMALL SIGNAL DIODES
FEATURES
♦ Silicon Epitaxial Planar Diodes
♦ For general purpose
♦ These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the Mini-MELF case with the type
designations BAV100 to BAV103, the SOT-23 case with
the type designation BAS19 - BAS21 and the SOD-123
case with the type designation BAV19W-BAV21W.
MECHANICAL DATA
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: BAV19WS=A8
BAV20WS=A81
BAV21WS=A82
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
VALUE
UNITS
Continuous Reverse Voltage
BAV19WS
VR
100
Volts
BAV20WS
VR
150
Volts
BAV21WS
VR
200
Volts
Repetitive Peak Reverse Voltage
BAV19WS
VRRM
120
Volts
BAV20WS
VRRM
200
Volts
BAV21WS
VRRM
250
Volts
Forward DC Current at Tamb = 25 °C
IF
2501)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
Io
2001)
mA
at Tamb = 25 °C and f ≥ 50 Hz
Repetitive Peak Forward Current
at f
≥ 50 Hz, Θ = 180 °, Tamb = 25 °C
IFRM
625
1)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C
IFSM
1
Amps
Power Dissipation at Tamb = 25 °C
Ptot
2001)
mW
Junction Temperature
Tj
1501)
°C
Storage Temperature Range
TS
–65 to + 1501)
°C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SOD-323
min. .010 (0.25)
.012 (0.3)
.059 (1.5)
Cathode Mark
Top View
.043 (1.1)
Dimensions are in inches and (millimeters)
12/11/98
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