BAV21 datasheet(1/4 Pages) GE

部件名	BAV21

功能描述	Small Signal Diodes

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制造商	GE [General Semiconductor]

网页	http://www.vishay.com

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FEATURES

Small Signal Diodes

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

DO-35

max. ∅

Cathode

.020 (0.52)

Mark

max. ∅.079 (2.0)

Dimensions in inches and (millimeters)

Case: DO-35 Glass Case

Weight: approx. 0.13 g

4/98

BAV19 THRU BAV21

Symbol

Value

Unit

Reverse Voltage

BAV19

BAV20

BAV21

VR

120

200

250

V

Forward DC Current at Tamb = 25 °C

IF

2501)

mA

Rectified Current (Average)

Half Wave Rectification with Resist. Load

at Tamb = 25 °C and f ≥ 50 Hz

I0

2001)

mA

Repetitive Peak Forward Current

at f

≥ 50 Hz, Θ = 180 °, Tamb = 25 °C

IFRM

6251)

mA

Surge Forward Current at t < 1 s, Tj = 25 °C

IFSM

1A

Power Dissipation at Tamb = 25 °C

Ptot

5001)

mW

Junction Temperature

Tj

1751)

°C

Storage Temperature Range

TS

–65 to +1751)

°C

1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

Silicon Epitaxial Planar Diodes

For general purpose

These diodes are also available in other

case styles including: the SOD-123 case

with the type designation BAV19W - BAV21W,

the MiniMELF case with the type designation

BAV101 - BAV103, and the SOT-23 case with the

type designation BAS19 - BAS21.

♦

类似零件编号 - BAV21

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAV21	54Kb / 12P	General purpose diodes 1999 May 25
Vishay Siliconix	BAV21	129Kb / 5P	Small Signal Switching Diodes, High Voltage 20-Apr-06
Fairchild Semiconductor	BAV21	36Kb / 1P	General Purpose Diodes
Fairchild Semiconductor	BAV21	148Kb / 8P	High Voltage General Purpose Diode
Diodes Incorporated	BAV21	62Kb / 2P	FAST SWITCHING DIODE DS22006 Rev. H-2

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