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BAW56 数据表(PDF) 1 Page - General Semiconductor

部件名 BAW56
功能描述  Small Signal Diodes
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAW56 数据表(HTML) 1 Page - General Semiconductor

  BAW56 Datasheet HTML 1Page - General Semiconductor BAW56 Datasheet HTML 2Page - General Semiconductor  
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FEATURES
Small Signal Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.037(0.95) .037(0.95)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
12
Top View
.102 (2.6)
.118 (3.0)
.094 (2.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings for a single diode at 25 °C ambient temperature unless otherwise specified.
SOT-23
4/98
BAW56
Marking
JD
Symbol
Value
Unit
Reverse Voltage, Peak Reverse Voltage
VR, VRM
70
V
Forward Current (continuous)
IF
250
mA
Non-Repetitive Peak Forward Current
at t = 1
µs
at t = 1 ms
at t = 1 s
IFSM
IFSM
IFSM
2
1
0.5
A
A
A
Power Dissipation at Tamb = 25 °C
Ptot
3501)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Device on fiberglass substrate, see layout
Top View
1
3
2
Silicon Epitaxial Planar Diodes
Fast switching dual diode with common
anode.
This diode is also available in other
configurations including: a single diode with type
designation BAL99, a dual anode to cathode with
type designation BAV99, and a dual common cathode
with type designation BAV70.


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