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BAW75 数据表(PDF) 2 Page - General Semiconductor

部件名 BAW75
功能描述  Small-Signal Diodes
PDF  4 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAW75 数据表(HTML) 2 Page - General Semiconductor

  BAW75 Datasheet HTML 1Page - General Semiconductor BAW75 Datasheet HTML 2Page - General Semiconductor BAW75 Datasheet HTML 3Page - General Semiconductor BAW75 Datasheet HTML 4Page - General Semiconductor  
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Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage
BAW75
VF
at IF = 30mA
1
V
BAW76
at IF = 100mA
1
BAW75
VR = 25V
100
nA
Leakage Current
BAW75
IR
VR = 25V, Tj = 150°C
100
µA
BAW76
VR = 50V
100
nA
BAW76
VR = 50V, Tj = 150°C
100
µA
Reverse Breakdown Voltage
BAW75
V(BR)R
tested with 5µA pulses
35
V
BAW76
75
Capacitance
BAW75
Ctot
VF = VR = 0V
——
4
pF
BAW76
2
IF = 10mA, IR = 10mA
——
4
Reverse Recovery Time
trr
Irr = 1mA
ns
IF = 10mA, IR = 1mA
——
2
VR =6V, RL = 100
BAW75 and BAW76
Small-Signal Diodes



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