BC856 datasheet(2/6 Pages) GE

2 / 6 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

h-Parameters

at –VCE = 5 V, –IC = 2 mA, f = 1 kHz

Current Gain

Current Gain Group A

Input Impedance

Current Gain Group A

Output Admittance

Current Gain Group A

Reverse Voltage Transfer Ratio

Current Gain Group A

hfe

hie

hoe

hre

–

1.6

3.2

–

220

330

600

2.7

4.5

8.7

1.5 · 10–4

2 · 10–4

3 · 10–4

–

4.5

8.5

110

–

Ω

µS

–

DC Current Gain

at –VCE = 5 V, –IC = 10 µA

Current Gain Group A

at –VCE = 5 V, –IC = 2 mA

Current Gain Group A

hFE

–

110

200

420

150

270

180

290

520

–

220

450

800

–

Thermal Resistance Junction to Substrate

Backside

RthSB

–

3201)

K/W

Thermal Resistance Junction to Ambient Air

RthJA

–

4501)

K/W

Collector Saturation Voltage

at –IC = 10 mA, –IB = 0.5 mA

at –IC = 100 mA, –IB = 5 mA

–VCEsat

–

250

300

650

Base Saturation Voltage

at –IC = 10 mA, –IB = 0.5 mA

at –IC = 100 mA, –IB = 5 mA

–VBEsat

–

700

900

–

Base-Emitter Voltage

at –VCE = 5 V, –IC = 2 mA

at –VCE = 5 V, –IC = 10 mA

–VBE

600

–

660

–

750

800

Collector-Emitter Cutoff Current

at –VCE = 80 V

BC856

at –VCE = 50 V

BC857

at –VCE = 30 V

BC858, BC859

at –VCE = 80 V, Tj = 125 °C

BC856

at –VCE = 50 V, Tj = 125 °C

BC857

at –VCE = 30 V, Tj = 125 °C

BC858, BC859

at –VCB = 30 V

at –VCB = 30 V, Tj = 150 °C

–ICES

–ICBO

–

0.2

–

µA

Gain-Bandwidth Product

at –VCE = 5 V, –IC = 10 mA, f = 100 MHz

–

150

–

MHz

1) Device on fiberglass substrate, see layout

BC856 THRU BC859

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BC856 数据表(PDF) 2 Page - General Semiconductor

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Html Pages

1 2 3 4 5 6

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