ES2F datasheet(1/2 Pages) GE

部件名	ES2F

功能描述	SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

PDF	2 Pages

Scroll/Zoom	100%

制造商	GE [General Semiconductor]

网页	http://www.vishay.com

标志

1 / 2 page

ES2F AND ES2G

SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 300 to 400 Volts

Forward Current - 2.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications

♦ Low profile package

♦ Built-in strain relief

♦ Ideal for automated placement

♦ Easy pick and place

♦ Glass passivated chip junction

♦ Superfast recovery times for high efficiency

♦ Low power loss, high efficiency

♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body

over passivated chip

Terminals: Solder plated solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Weight: 0.003 ounces, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

ES2F

ES2G

UNITS

Device marking code

EF

EG

Maximum repetitive peak reverse voltage

VRRM

300

400

Volts

Working peak reverse voltage

VRWM

225

300

Volts

Maximum RMS voltage

VRMS

210

280

Volts

Maximum DC blocking voltage

VDC

300

400

Volts

Maximum average forward rectified current

at TL=110°C

I(AV)

2.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

IFSM

50

Amps

rated load (JEDEC Method) at TL=110°C

Maximum instantaneous forward voltage at 2.0A

VF

1.10

Volts

Maximum DC reverse current

TA=25°C

10

at working peak reverse voltage

TA=100°C

IR

200

µA

Maximum reverse recovery time (NOTE 1)

trr

35

ns

Maximum reverse recovery time (NOTE 2)

trr

50

ns

Maximum reverse recovery current (NOTE 2)

IRM

3.0

Amps

Maximum stored charge (NOTE 2)

Qrr

50

nC

Typical junction capacitance (NOTE 3)

CJ

15

pF

Typical thermal resistance (NOTE 4)

R

ΘJA

75

R

ΘJL

25

°C/W

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

°C

NOTES:

(1) Reverse recovery test conditions: IF=0.5A, IR= I.0A, lrr=0.25A

(2) Measured at IF=1.0A, di/dt=100A/

µs, VR=30V, Irr=0.1IRM

(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts

(4) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas

NOTICE: Advanced product information is subject to change without notice

4/98

0.160 (4.06)

0.180 (4.57)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.205 (5.21)

0.220 (5.59)

0.084 (2.13)

0.096 (2.44)

0.077 (1.95)

0.086 (2.20)

0.130 (3.30)

0.155 (3.94)

MAX.

DO-214AA

Dimensions in inches and (millimeters)

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