| 数据搜索系统,热门电子元器件搜索 |
|
ES3F 数据表(PDF) 1 Page - General Semiconductor |
|
|
|||||||||||||||||||||||||||||
ES3F 数据表(HTML) 1 Page - General Semiconductor |
|
1 / 2 page ![]() ES3F AND ES3G SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 300 to 400 Volts Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Built-in strain relief ♦ Ideal for automated placement ♦ Easy pick and place ♦ Superfast recovery time for high efficiency ♦ Glass passivated chip junction ♦ High temperature soldering: 250°C/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AB molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007 ounces, 0.21 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS ES3F ES3G UNITS Device marking code EF EG Maximum repetitive peak reverse voltage VRRM 300 400 Volts Working peak reverse voltage VRWM 225 300 Volts Maximum RMS voltage VRMS 210 280 Volts Maximum DC blocking voltage VDC 300 400 Volts Maximum average forward rectified current at TL=100°C I(AV) 3.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on IFSM 100 Amps rated load (JEDEC Method) at TL=100°C Maximum instantaneous forward voltage at 3.0A VF 1.10 Volts Maximum DC reverse current TA=25°C 10.0 at working peak reverse voltage TA=100°C IR 350 µA Maximum reverse recovery time (NOTE 1) trr 35 ns Maximum reverse recovery time (NOTE 2) trr 50 ns Maximum reverse recovery current (NOTE 2) IRM 3.0 Amps Maximum stored charge (NOTE 2) Qrr 50 ns Typical junction capacitance (NOTE 3) CJ 30 pF Typical thermal resistance (NOTE 4) R ΘJA 50 R ΘJL 15 °C/W Operating junction and storage temperature range TJ, TSTG -55 to +150 °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at IF=1.0A, di/dt=100A/ µs, VR=30V, Irr=0.1IRM (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts (4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas NOTICE: Advanced product information is subject to change without notice 4/98 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.305 (7.75) 0.320 (8.13) 0.260 (6.60) 0.280 (7.11) 0.079 (2.06) 0.103 (2.62) 0.220 (5.59) 0.245 (6.22) 0.126 (3.20) 0.114 (2.90) MAX. DO-214AB Dimensions in inches and (millimeters) NEW PRODUCT NEW PRODUCT NEW PRODUCT |
类似零件编号 - ES3F |
|
类似说明 - ES3F |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |