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ES3C 数据表(PDF) 1 Page - General Semiconductor

部件名 ES3C
功能描述  SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

ES3C 数据表(HTML) 1 Page - General Semiconductor

  ES3C Datasheet HTML 1Page - General Semiconductor ES3C Datasheet HTML 2Page - General Semiconductor  
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ES3A THRU ES3D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recovery time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
ES3A
ES3B
ES3C
ES3D
UNITS
Device marking code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts
Maximum average forward rectified current at TL=100°C
I(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
100.0
Amps
rated load (JEDEC Method) at TL=100°C
Maximum instantaneous forward voltage at 3.0A
VF
0.90
Volts
Maximum DC reverse current
TA=25°C
10.0
at rated DC blocking voltage
TA=100°C
IR
500.0
µA
Maximum reverse recovery time (NOTE 1)
trr
20.0
ns
Maximum reverse recovery time
TJ=25°C
30.0
(NOTE 2)
TJ=100°C
trr
50.0
ns
Maximum stored charge
TJ=25°C
15.0
(NOTE 2)
TJ=100°C
Qrr
35.0
nC
Typical junction capacitance (NOTE 3)
CJ
45.0
pF
Typical thermal resistance (NOTE 4)
R
ΘJA
47.0
R
ΘJL
12.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: VR=30V, di/dt=50A/
µs, IF=3.0A, and Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
4/98
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.305 (7.75)
0.320 (8.13)
0.260 (6.60)
0.280 (7.11)
0.079 (2.06)
0.103 (2.62)
0.220 (5.59)
0.245 (6.22)
0.126 (3.20)
0.114 (2.90)
MAX.
DO-214AB
Dimensions in inches and (millimeters)


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