FESF8AT datasheet(2/2 Pages) GE

2 / 2 page

100

150

2.0

4.0

6.0

8.0

100

125

150

0.1

100

1,000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

100

0.01

0.1

100

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVES

AMBIENT TEMPERATURE, °C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

NUMBER OF CYCLES AT 60 HZ

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

REVERSE VOLTAGE, VOLTS

TC=100

°C

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

RESISTIVE OR

INDUCTIVE LOAD

FREE AIR, AMBIENT, TEMPERATURE TA

HEATSINK, CASE TEMPERATURE, TC

TJ=25°C

PULSE WIDTH=300

µs

1% DUTY CYCLE

TJ=125°C

50 - 200V

300 - 400V

500 - 600V

50 - 400V

500 - 600V

TJ=125°C

TJ=100°C

TJ=25°C

f=1.0 MHz

Vsig=50mVp-p

50-400V

500-600V

RATINGS AND CHARACTERISTIC CURVES FESF8AT THRU FESF8JT

FESF8AT 数据表(PDF) 2 Page - General Semiconductor

FESF8AT 数据表(HTML) 2 Page - General Semiconductor

Html Pages

1 2

数据表下载

链接网址

FESF8AT 数据表(PDF) 2 Page - General Semiconductor

FESF8AT 数据表(HTML) 2 Page - General Semiconductor

Html Pages

1 2

数据表 下载

链接网址

数据表下载