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LL101C 数据表(PDF) 1 Page - General Semiconductor

部件名 LL101C
功能描述  Schottky Diodes
PDF  3 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

LL101C 数据表(HTML) 1 Page - General Semiconductor

  LL101C Datasheet HTML 1Page - General Semiconductor LL101C Datasheet HTML 2Page - General Semiconductor LL101C Datasheet HTML 3Page - General Semiconductor  
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FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
Cathode Mark
.134 (3.4)
.011 (0.28)
4/98
LL101A THRU LL101C
Symbol
Value
Unit
Peak Inverse Voltage
LL101A
LL101B
LL101C
VRRM
VRRM
VRRM
60
50
40
V
V
V
Power Dissipation (Infinite Heatsink)
Ptot
4001)
mW
Max. Single Cycle Surge
10
µs Square Wave
IFSM
2A
Junction Temperature
Tj
125
°C
Storage Temperature Range
TS
–55 to +150
°C
1) Valid provided that electrodes are kept at ambient temperature.
For general purpose applications.
The LL101 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the DO-35 case with type
designation SD101A, B, C, and in the SOD-123 case
with type designation SD101AW, SD101BW, SD101CW.
♦
♦
♦


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