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LL101C 数据表(PDF) 1 Page - General Semiconductor |
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LL101C 数据表(HTML) 1 Page - General Semiconductor |
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1 / 3 page ![]() FEATURES Schottky Diodes MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g Dimensions in inches and (millimeters) MiniMELF .142 (3.6) .019 (0.48) Cathode Mark .134 (3.4) .011 (0.28) 4/98 LL101A THRU LL101C Symbol Value Unit Peak Inverse Voltage LL101A LL101B LL101C VRRM VRRM VRRM 60 50 40 V V V Power Dissipation (Infinite Heatsink) Ptot 4001) mW Max. Single Cycle Surge 10 µs Square Wave IFSM 2A Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +150 °C 1) Valid provided that electrodes are kept at ambient temperature. For general purpose applications. The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation SD101A, B, C, and in the SOD-123 case with type designation SD101AW, SD101BW, SD101CW. ♦ ♦ ♦ |
类似零件编号 - LL101C |
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类似说明 - LL101C |
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