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LL41 数据表(PDF) 2 Page - General Semiconductor |
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LL41 数据表(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified LL41 Test Conditions Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses V(BR)R 100 110 – V Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA VF VF – – 0.40 – 0.45 1.0 V V Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj = 25 °C at VR = 50 V, at Tj = 100 °C IR IR – – – – 100 20 nA µA Capacitance at VR = 1 V, f = 1 MHz Ctot –2–pF Reverse Recovery Time from IF = 10 mA, to IR = 10 mA to IR = 1 mA RL = 100 Ohm trr –5–ns Thermal Resistance Junction to Ambient Air RthJA – – 3001) K/W 1) Valid provided that electrodes are kept at ambient temperature. |
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