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LL4151 数据表(PDF) 2 Page - General Semiconductor |
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LL4151 数据表(HTML) 2 Page - General Semiconductor |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified LL4151 Rectification Efficiency Measurement Circuit Symbol Min. Typ. Max. Unit Forward Voltage at IF = mA VF ––1 V Leakage Current at VR = 50 V at VR = 50 V, Tj = 150 °C IR IR – – – – 50 50 nA µA Capacitance at VF = VR = 0 Ctot ––2pF Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr trr – – – – 4 2 ns ns Thermal Resistance Junction to Ambient Air RthJA ––0.351) K/mW Rectification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 ––– 1) Valid provided that electrodes are kept at ambient temperature. |
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