10/6/00

Features

• For general purpose applications

• Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring.

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices, steer-

ing, biasing and coupling diodes for fast switching

and low logic level applications.

• This diode is also available in the DO-35 case

with type designation 1N5711 and 1N6263.

Mechanical Data

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

Cathode Band Color: Green

Packaging Codes/Options:

D1/10K per 13” reel (8mm tape), 20K/box

D2/2.5K per 7” reel (8mm tape), 20K/box

Parameter

Symbol

Value

Unit

Peak Inverse Voltage

LL5711

70

V

LL6263

60

Power Dissipation (Infinite Heatsink)

mW

Maximum Single Cycle Surge 10

µs Square Wave

2.0

A

Junction Temperature

125

°C

Storage Temperature Range

–55 to +150

°C

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Reverse Breakdown Voltage

LL5711

µA

70

—

—

V

LL6263

60

—

—

Leakage Current

—

—

200

nA

Forward Voltage Drop

—

—

0.41

V

—

—

1.0

Junction Capacitance

—

—

2.2

pF

Reverse Recovery Time

——

1

ns

Note: (1) Valid provided that electrodes are kept at ambient temperature.

.146 (3.7)

.019 (0.48)

Cathode Band

.130 (3.3)

.051 (1.3)

.011 (0.28)

.063 (1.6)

Dia.

MiniMELF (SOD-80C)

Dimensions in inches and (millimeters)

LL5711 and LL6263

Schottky Diodes