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MB2M 数据表(PDF) 1 Page - General Semiconductor

部件名 MB2M
功能描述  MINIATURE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

MB2M 数据表(HTML) 1 Page - General Semiconductor

  MB2M Datasheet HTML 1Page - General Semiconductor MB2M Datasheet HTML 2Page - General Semiconductor  
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MB2M THRU MB6M
MINIATURE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 200 to 600 Volts
Forward Current - 0.5 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
♦ This series is UL recognized under Component Index,
file number E54214
♦ Glass passivated chip junctions
♦ High surge overload rating: 35A peak
♦ Saves space on printed circuit board
♦ High temperature soldering guaranteed:
260°C/10 seconds, at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Mounting Position: Any
Weight: 0.078 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MB2M
MB4M
MB6M
UNITS
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
Volts
Maximum RMS voltage
VRMS
140
280
420
Volts
Maximum DC blocking voltage
VDC
200
400
600
Volts
Maximum average forward output rectified
current at TA=30°C - on glass-epoxy P.C.B. (NOTE 1)
I(AV)
0.5
Amp
on aluminum substrate (NOTE 2)
0.8
Peak forward surge current 8.3msec. single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
35.0
Amps
Rating for fusing (t<8.3ms)
I2t
5.0
A
2sec
Maximum instantaneous forward voltage drop
per leg at 0.4A
VF
1.0
Volts
Maximum DC reverse current at
TA=25°C
5.0
µA
rated DC blocking voltage per leg
TA=125°C
IR
500
Typical junction capacitance per leg (NOTE 3)
CJ
13.0
pF
Typical thermal resistance per leg
(NOTE 1)
R
ΘJL
20.0
(NOTE 1)
R
ΘJA
85.0
°C/W
(NOTE 2)
R
ΘJA
70.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
NOTES:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05” (1.3 x 1.3mm) solder pads
(2) On aluminum substrate P.C.B. with an area of 0.8 x 0.8 x 0.25” (20 x 20 x 6.4mm) mounted
on 0.05 x 0.05” (1.3 x1.3mm) solder pad
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
0.147 (3.73)
0.137 (3.48)
0.144 (3.65)
0.161 (4.10)
0.106 (2.70)
0.090 (2.30)
0.190 (4.83)
0.179 (4.55)
0.029 (0.74)
0.017 (0.43)
0.012 (0.30)
0.008 (0.20)
0.105 (2.67)
0.095 (2.41)
0.047 (1.19)
0.038 (0.96)
0.205 (5.21)
0.195 (4.95)
0-10
°
0.117 (2.97)
0.107 (2.72)
0.028 (0.71)
0.020 (0.51)
0.016(0.41)
0.006 (0.15)
0.100 (2.54)
MIN.
0.049 (1.24)
0.039 (0.99)
Case Style MBM
Dimensions in inches and (millimeters)
PATENT PENDING
PATENT PENDING
PATENT PENDING


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