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MBR1045 数据表(PDF) 1 Page - General Semiconductor

部件名 MBR1045
功能描述  SCHOTTKY RECTIFIER
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

MBR1045 数据表(HTML) 1 Page - General Semiconductor

  MBR1045 Datasheet HTML 1Page - General Semiconductor MBR1045 Datasheet HTML 2Page - General Semiconductor  
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MBR1035 THRU MBR1060
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
Forward Current - 10.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction, majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability,
low forward voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 1.81 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR1035
MBR1045
MBR1050
MBR1060
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current
(SEE FIG. 1)
I(AV)
10.0
Amps
Peak repetitive forward current at TC=135°C
(square wave 20 KHZ)
IFRM
20.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
Voltage rate of change (rated VR)
dv/dt
10,000
V
µs
Maximum instantaneous
IF=10A, TC=25°C
-
0.80
forward voltage at (NOTE 2)
IF=10A, TC=125°C
0.57
0.70
Volts
IF=20A, TC=25°C
VF
0.84
0.95
IF=20A, TC=125°C
0.72
0.85
Maximum instantaneous reverse current at rated
DC blocking voltage
TC= 25°C
IR
0.10
mA
(NOTE 2) TC=125°C
15.0
Maximum thermal resistance, junction to case
R
ΘJC
2.0
°C/W
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES:
(1) 2.0
µs pulse width, f=1.0 KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
4/98
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
12
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN
PIN 1
PIN 2
CASE
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
Dimensions in inches and (millimeters)


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