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MBRB735 数据表(PDF) 1 Page - General Semiconductor

部件名 MBRB735
功能描述  SCHOTTKY RECTIFIER
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

MBRB735 数据表(HTML) 1 Page - General Semiconductor

  MBRB735 Datasheet HTML 1Page - General Semiconductor MBRB735 Datasheet HTML 2Page - General Semiconductor  
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MBRB735 THRU MBRB760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
Forward Current - 7.5 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBRB735
MBRB745
MBRB750
MBRB760
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current (SEE FIG 1)
I(AV)
7.5
Amps
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
IFRM
15.0
Amps
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
Maximum instantaneous
IF=7.5A, TC=25°C
-
0.75
forward voltage at
IF=7.5A, TC=125°C
VF
0.57
0.65
Volts
(NOTE 2)
IF=15A, TC=25°C
0.84
-
IF=15A, TC=125°C
0.72
-
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
IR
0.1
0.5
mA
(NOTE 1)
TC=125°C
15.0
50.0
Voltage rate of change (rated VR)
dv/dt
10,000
1,000
V/
µs
Maximum thermal resistance, (NOTE 3)
R
ΘJC
3.0
°C/W
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES:
(1) 2.0
µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case
4/98
TO-263AB
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
Dimensions in inches and (millimeters)


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