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MBRB735 数据表(PDF) 1 Page - General Semiconductor |
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MBRB735 数据表(HTML) 1 Page - General Semiconductor |
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1 / 2 page ![]() MBRB735 THRU MBRB760 SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed MECHANICAL DATA Case: JEDEC TO-263AB molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounces, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBRB735 MBRB745 MBRB750 MBRB760 UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps Peak repetitive forward current (square wave, 20 KHZ) at TC=105°C IFRM 15.0 Amps Peak forward surge current, 8.3ms single half sine- wave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps Maximum instantaneous IF=7.5A, TC=25°C - 0.75 forward voltage at IF=7.5A, TC=125°C VF 0.57 0.65 Volts (NOTE 2) IF=15A, TC=25°C 0.84 - IF=15A, TC=125°C 0.72 - Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C IR 0.1 0.5 mA (NOTE 1) TC=125°C 15.0 50.0 Voltage rate of change (rated VR) dv/dt 10,000 1,000 V/ µs Maximum thermal resistance, (NOTE 3) R ΘJC 3.0 °C/W Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C NOTES: (1) 2.0 µs, pulse width, f=1.0 KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case 4/98 TO-263AB -T- SEATING PLATE 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.360 (9.14) 0.575 (14.60) 0.625 (15.88) 0.027 (0.686) 0.037 (0.940) 1 2 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.090 (2.29) 0.110 (2.79) 0.245 (6.22) MIN - HEATSINK PIN 1 K K 0.095 (2.41) 0.100 (2.54) K PIN 2 0.047 (1.19) 0.055 (1.40) Dimensions in inches and (millimeters) |
类似零件编号 - MBRB735 |
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类似说明 - MBRB735 |
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