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SD101CW 数据表(PDF) 1 Page - General Semiconductor

部件名 SD101CW
功能描述  Schottky Diodes
PDF  3 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

SD101CW 数据表(HTML) 1 Page - General Semiconductor

  SD101CW Datasheet HTML 1Page - General Semiconductor SD101CW Datasheet HTML 2Page - General Semiconductor SD101CW Datasheet HTML 3Page - General Semiconductor  
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FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
.067 (1.70)
min. .010 (0.25)
Cathode Mark
Top View
.055 (1.40)
4/98
SD101AW THRU SD101CW
Symbol
Value
Unit
Peak Inverse Voltage
SD101AW
SD101BW
SD101CW
VRRM
VRRM
VRRM
60
50
40
V
V
V
Power Dissipation (Infinite Heat Sink)
Ptot
4001) 2)
mW
Max. Single Cycle Surge
10
µs Square Wave
IFSM
2A
Junction Temperature
Tj
1252)
°C
Storage Temperature Range
TS
– 65 to +1502)
°C
2) Valid provided that electrodes are kept at ambient temperature
For general purpose applications.
The LL101 series is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring. The
low forward voltage drop and fast switching
make it ideal for protection of MOS
devices, steering, biasing, and coupling
diodes for fast switching and low logic level applications.
These diodes are also available in the MiniMELF
case with type designation LL101A thru LL101C
and in the DO-35 case with type designations
SD101A thru SD101C.


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